Nanoscale Materials: A General Approach for Fast Detection of Charge Carrier Type and Conductivity Difference in Nanoscale Materials (Adv. Mater. 48/2013)

Authors

  • Lili Jiang,

    1. Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, P. R. China
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  • Bin Wu,

    1. Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Science, Beijing, P. R. China
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  • Hongtao Liu,

    1. Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Science, Beijing, P. R. China
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  • Yuan Huang,

    1. Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, P. R. China
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  • Jianyi Chen,

    1. Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Science, Beijing, P. R. China
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  • Dechao Geng,

    1. Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Science, Beijing, P. R. China
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  • Hongjun Gao,

    Corresponding author
    1. Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, P. R. China
    • Hongjun Gao, Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 P. R. China

      Yunqi Liu, Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Science, Beijing 100190 P. R. China

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  • Yunqi Liu

    Corresponding author
    1. Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Science, Beijing, P. R. China
    • Hongjun Gao, Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 P. R. China

      Yunqi Liu, Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Science, Beijing 100190 P. R. China

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Abstract

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By using tapping-mode AFM with a biased tip, the type of material (e.g.,metallic, n-, or p-type semiconductor) can be distinguished. Taking p-doping of graphene as an example, Y. Q. Liu, H. J. Gao and co-workers, on page 7015, observe a series of false apparent heights of graphene flakes when applying a series of different voltages on the tip. However, the heights under negative bias are higher than those under positive bias at the same value. This is caused by an asymmetric polarization effect, which is related to the p-doping nature of graphene.

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