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Oxide Resistive Memory with Functionalized Graphene as Built-in Selector Element

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Abstract

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A resistive memory with graphene electrodes is demonstrated. The spontaneous functionalization of graphene during device fabrication results in insulator-metal transition-like volatile threshold switching, creating a 1 selector – 1 resistor (1S1R) structure with a built-in selector and leading to a desirable highly nonlinear on-state behavior of the oxide resistive memory.

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