Highly Stable Carbon Nanotube Top-Gate Transistors with Tunable Threshold Voltage

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Abstract

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Carbon-nanotube top-gate transistors with fluorinated dielectrics are presented. With PTrFE as the dielectric, the devices have absent or small hysteresis at different sweep rates and excellent bias-stress stability under ambient conditions. Ambipolar single-walled carbon nanotube (SWNT) transistors are observed when P(VDF-TrFE-CTFE) is utilized as a topgate dielectric. Furthermore, continuous tuning of the threshold voltages of both unipolar and ambipolar SWNT thin-film transistors (TFTs) is demonstrated for the first time.

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