Electronic Properties of Isosymmetric Phase Boundaries in Highly Strained Ca-Doped BiFeO3
Version of Record online: 14 APR 2014
© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Volume 26, Issue 25, pages 4376–4380, July 2, 2014
How to Cite
Seidel, J., Trassin, M., Zhang, Y., Maksymovych, P., Uhlig, T., Milde, P., Köhler, D., Baddorf, A. P., Kalinin, S. V., Eng, L. M., Pan, X. and Ramesh, R. (2014), Electronic Properties of Isosymmetric Phase Boundaries in Highly Strained Ca-Doped BiFeO3. Adv. Mater., 26: 4376–4380. doi: 10.1002/adma.201400557
- Issue online: 1 JUL 2014
- Version of Record online: 14 APR 2014
- Manuscript Revised: 19 MAR 2014
- Manuscript Received: 4 FEB 2014
- US Department of Energy. Grant Number: DE-AC02–05CH11231
- Korean Government. Grant Number: NRF-2013S1A2A2035418
- Oak Ridge National Laboratory
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