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Electric Field Manipulation of Magnetization Rotation and Tunneling Magnetoresistance of Magnetic Tunnel Junctions at Room Temperature

Authors

  • Peisen Li,

    1. Department of Physics and State Key, Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing, China
    2. Collaborative Innovation Center of Quantum Matter, Beijing, China
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  • Aitian Chen,

    1. Department of Physics and State Key, Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing, China
    2. Collaborative Innovation Center of Quantum Matter, Beijing, China
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  • Dalai Li,

    1. Beijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences, Beijing, China
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  • Yonggang Zhao,

    Corresponding author
    1. Department of Physics and State Key, Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing, China
    2. Collaborative Innovation Center of Quantum Matter, Beijing, China
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  • Sen Zhang,

    1. Department of Physics and State Key, Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing, China
    2. Collaborative Innovation Center of Quantum Matter, Beijing, China
    3. College of Science, National University of Defense Technology, Changsha, China
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  • Lifeng Yang,

    1. Department of Physics and State Key, Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing, China
    2. Collaborative Innovation Center of Quantum Matter, Beijing, China
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  • Yan Liu,

    1. Department of Physics and State Key, Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing, China
    2. Collaborative Innovation Center of Quantum Matter, Beijing, China
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  • Meihong Zhu,

    1. Department of Physics and State Key, Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing, China
    2. Collaborative Innovation Center of Quantum Matter, Beijing, China
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  • Huiyun Zhang,

    1. Department of Physics and State Key, Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing, China
    2. Collaborative Innovation Center of Quantum Matter, Beijing, China
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  • Xiufeng Han

    Corresponding author
    1. Beijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences, Beijing, China
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Abstract

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Electric-field-controlled tunneling magnetoresistance (TMR) of magnetic tunnel junctions is considered as the milestone of ultralow power spintronic devices. Here, reversible, continuous magnetization rotation and manipulation is reported for TMR at room temperature in CoFeB/AlOx/CoFeB/piezoelectric structure by electric fields without the assistance of a magnetic field through strain-mediated interaction. These results provide a new way of exploring electric-field-controlled spintronics.

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