These authors contributed equally to this work.
Nanosecond Intersystem Crossing Times in Fullerene Acceptors: Implications for Organic Photovoltaic Diodes
Article first published online: 6 JUN 2014
© 2014 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.
Volume 26, Issue 28, pages 4851–4854, July 23, 2014
How to Cite
Chow, P. C. Y., Albert-Seifried, S., Gélinas, S. and Friend, R. H. (2014), Nanosecond Intersystem Crossing Times in Fullerene Acceptors: Implications for Organic Photovoltaic Diodes. Adv. Mater., 26: 4851–4854. doi: 10.1002/adma.201400846
- Issue published online: 19 JUL 2014
- Article first published online: 6 JUN 2014
- Manuscript Revised: 14 APR 2014
- Manuscript Received: 22 FEB 2014
- Engineering and Physical Sciences Research Council
- Winton Programme for the Physics of Sustainability
- Indo-UK APEX Program
- Fonds québécois de recherche sur la nature et les technologies
- organic electronics;
- solar cells;
- photovoltaic devices;
- electronic processes
Triplet-exciton formation through intersystem crossing of photogenerated singlet excitons in fullerene acceptors can compete with charge generation in organic photovoltaic diodes. This article reports the intersystem crossing timescale (τISC) of the most commonly used fullerene acceptors, PC60BM and PC70BM, in solutions and in spin-coated films. These times are on the nanosecond timescale, and are longer than the characteristic times for charge generation (τd).