Advanced Materials

Atomic Layer Deposited Gallium Oxide Buffer Layer Enables 1.2 V Open-Circuit Voltage in Cuprous Oxide Solar Cells

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Abstract

The power conversion efficiency of solar cells based on copper (I) oxide (Cu2O) is enhanced by atomic layer deposition of a thin gallium oxide (Ga2O3) layer. By improving band-alignment and passivating interface defects, the device exhibits an open-circuit voltage of 1.20 V and an efficiency of 3.97%, showing potential of over 7% efficiency.

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