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Advanced Materials

p-i-n Heterojunction Solar Cells with a Colloidal Quantum-Dot Absorber Layer

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Abstract

A quantum-dot (QD) p-i-n heterojunction solar cell with an increased depletion region is demonstrated by depleting the QD layer from both the front and back junctions. Due to a combination of improved charged extraction and increased light absorption, a 120% increase in the short-circuit current is achieved compared with that of conventional ZnO/QD devices.

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