Organic Transistors: 25th Anniversary Article: Microstructure Dependent Bias Stability of Organic Transistors (Adv. Mater. 11/2014)

Authors

  • Wi Hyoung Lee,

    1. Department of Organic and Nano System Engineering, Konkuk University, Seoul, Korea
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  • Hyun Ho Choi,

    1. Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, Korea
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  • Do Hwan Kim,

    Corresponding author
    1. Department of Organic Materials and Fiber Engineering, Soongsil University, Seoul, Korea
    • Do Hwan Kim, Department of Organic and Nano System Engineering, Konkuk University, Seoul 143–701 Korea

      Kilwon Cho, Department of Chemical Engineering, Pohang University of Science and Technology, Pohang 790–784 Korea

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  • Kilwon Cho

    Corresponding author
    1. Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, Korea
    • Do Hwan Kim, Department of Organic and Nano System Engineering, Konkuk University, Seoul 143–701 Korea

      Kilwon Cho, Department of Chemical Engineering, Pohang University of Science and Technology, Pohang 790–784 Korea

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Abstract

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Recent studies of the bias-stress-driven electrical instability of organic field-effect transistors are reviewed by K. Cho, D. H. Kim, and co-workers on page 1660. The principles underlying the bias instability are discussed, particularly the mechanisms of charge trapping. The charge-trapping phenomena in the semiconductor, the dielectric, and the semiconductor-dielectric interface are analyzed with special attention to the microstructural dependence of bias instability.

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