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Organic Electronics: Towards Colorless Transparent Organic Transistors: Potential of Benzothieno[3,2-b]benzothiophene-Based Wide-Gap Semiconductors (Adv. Mater. 19/2014)

Authors

  • Hanul Moon,

    1. Department of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Republic of Korea
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  • Hyunsu Cho,

    1. Department of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Republic of Korea
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  • Mincheol Kim,

    1. Department of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Republic of Korea
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  • Kazuo Takimiya,

    1. Department of Applied Chemistry, Hiroshima University, Higashi-Hiroshima, Japan
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  • Seunghyup Yoo

    Corresponding author
    1. Department of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Republic of Korea
    • Department of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 305–701 Republic of Korea

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Abstract

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Transparent organic thin-film transistors (OTFTs) offer great potential as building blocks for invisible/seethrough electronic devices, which are promising for futuristic applications, such as augmented reality and interactive human interfaces. On page 3105, S. Yoo and co-workers provide a systematic strategy to fabricate fully transparent, colorless OTFTs using metal-based multilayer transparent electrodes and organic semiconductors of a benzothieno[3,2-b]benzothiophene derivative, which have recently attracted great attention as a high-mobility channel material.

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