Multibit Memory Using Self-Assembly of Mixed Ferrocene/Porphyrin Monolayers on Silicon (pages 133–137)
Q. Li, G. Mathur, S. Gowda, S. Surthi, Q. Zhao, L. Yu, J. S. Lindsey, D. F. Bocian and V. Misra
Article first published online: 29 JAN 2004 | DOI: 10.1002/adma.200305680
An alternative strategy for achieving multi-bit functionality, which uses mixed self-assembled monolayers of a benzyl alcohol-tethered ferrocene (Fc-BzOH) and a benzyl alcohol-tethered porphyrin (Por-BzOH) on silicon surfaces to achieve a four-state (2-bit) memory element, is presented. The four states include the neutral state and three distinct cationic states obtained upon oxidation of Fc-BzOH (monopositive) and Por-BzOH (monopositive, dipositive) molecules. Conventional cyclic voltammetry, capacitance, and conductance methods have been used to characterize the mixed monolayer.