Ultralow-Threshold Laser Realized in Zinc Oxide (pages 1613–1617)
Hai Zhu, Chong-Xin Shan, Bin Yao, Bing-Hui Li, Ji-Ying Zhang, Zheng-Zhong Zhang, Dong-Xu Zhao, De-Zhen Shen, Xi-Wu Fan, You-Ming Lu and Zi-Kang Tang
Version of Record online: 28 JAN 2009 | DOI: 10.1002/adma.200802907
Lasing action is realized in a ZnO/GaN heterojunction by employing a MgO interlayer. The MgO layer can confine electrons in the ZnO layer, while holes can pass through the MgO layer and enter into the n-ZnO layer from the p-GaN layer. The threshold of the lasing action is as low as 0.8 mA..