A Chemical Solution Approach to Epitaxial Metal Nitride Thin Films (pages 193–197)
Hongmei Luo, Yuan Lin, Haiyan Wang, Joon Hwan Lee, Natalya A. Suvorova, Alexander H. Mueller, Anthony K. Burrell, T. Mark McCleskey, Eve Bauer, Igor O. Usov, Marilyn E. Hawley, Terry G. Holesinger and Quanxi Jia
Version of Record online: 30 OCT 2008 | DOI: 10.1002/adma.200801959
Epitaxial metal nitride films are prepared using a general chemical solution approach. A polymer-assisted deposition to prepare epitaxial cubic TiN, metastable AlN, and ternary nitride Ti1−xAlxN films is demonstrated. The structural, optical and electrical properties of the films are investigated, and may be of interest for many technological applications.