All-Manganite Tunnel Junctions with Interface-Induced Barrier Magnetism (pages 5029–5034)
Z. Sefrioui, C. Visani, M. J. Calderón, K. March, C. Carrétéro, M. Walls, A. Rivera-Calzada, C. León, R. Lopez Anton, T. R. Charlton, F. A. Cuellar, E. Iborra, F. Ott, D. Imhoff, L. Brey, M. Bibes, J. Santamaria and A. Barthélémy
Article first published online: 7 SEP 2010 | DOI: 10.1002/adma.201002067
In epitaxial heterostructures combining strongly correlated manganese oxides with antiferromagnetic-insulator or half-metallic character, a large interfacial moment is found and used to produce a spin-filter-like behavior in all-manganite tunnel junctions. The results suggest that after playing a key role in exchange-bias for spin-valves, uncompensated moments at engineered antiferromagnetic interfaces represent a novel route for generating highly spin-polarized currents with antiferromagnets.