Low-Threshold Electrically Pumped Random Lasers (pages 1877–1881)
Hai Zhu, Chong-Xin Shan, Ji-Ying Zhang, Zhen-Zhong Zhang, Bing-Hui Li, Dong-Xu Zhao, Bin Yao, De-Zhen Shen, Xi-Wu Fan, Zi-Kang Tang, Xianghui Hou and Kwang-Leong Choy
Version of Record online: 12 FEB 2010 | DOI: 10.1002/adma.200903623
Electrically pumped random lasers are realized in ZnO nanocrystallite films in a simple metal–oxide–semiconductor structure. By introducing an i-ZnO layer, a threshold current of 6.5 mA is obtained. The reported results provide a simple route to electrically pumped random lasing (see figure) with relatively low threshold, a significant step towards the future applications of this kind of laser.