Single ZnO Nanowire/p-type GaN Heterojunctions for Photovoltaic Devices and UV Light-Emitting Diodes (pages 4284–4287)
Ya-Qing Bie, Zhi-Min Liao, Peng-Wei Wang, Yang-Bo Zhou, Xiao-Bing Han, Yu Ye, Qing Zhao, Xiao-Song Wu, Lun Dai, Jun Xu, Li-Wen Sang, Jun-Jing Deng, K. Laurent, Y. Leprince-Wang and Da-Peng Yu
Version of Record online: 22 JUL 2010 | DOI: 10.1002/adma.201000985
We fabricate heterojunctions consisting of a single n-type ZnO nanowire and a p-type GaN film. The photovoltaic effect of heterojunctions exhibits open-circuit voltages ranging from 2 to 2.7 V, and a maximum output power reaching 80 nW. Light-emitting diodes with UV electroluminescence based on the heterojunctions are demonstrated.