A Resistive Memory in Semiconducting BiFeO3 Thin-Film Capacitors (pages 1277–1281)
An Quan Jiang, Can Wang, Kui Juan Jin, Xiao Bing Liu, James F. Scott, Cheol Seong Hwang, Ting Ao Tang, Hui Bin Lu and Guo Zhen Yang
Version of Record online: 31 JAN 2011 | DOI: 10.1002/adma.201004317
A ferroelectric-resistive random access memory consisting of a conductive BiFeO3 epitaxial thin film with a unipolar diode current modulated by electric polarization orientation is reported. This device has a memory that lasts for months, a sufficiently high on current and on/off ratio to permit ordinary sense amplifiers to measure “1” or “0”, and is fully compatible with complementary metal-oxide semiconductor processing.