Phase-Change Memory in Bi2Te3 Nanowires (pages 1871–1875)
Nalae Han, Sung In Kim, Jeong-Do Yang, Kyumin Lee, Hyunchul Sohn, Hye-Mi So, Chi Won Ahn and Kyung-Hwa Yoo
Article first published online: 23 MAR 2011 | DOI: 10.1002/adma.201004746
Bi2Te3 nanowires exhibit the phase-change memory switching behavior. The as-grown nanowire has a linear current–voltage curve and a crystalline structure. After switching to the high-resistance state with a voltage pulse, the crystalline phases are partially changed to amorphous phases. This indicates that a crystalline–amorphous phase change in Bi2Te3 nanowires can be induced by a voltage pulse.