p-i-n Homojunction in Organic Light-Emitting Transistors (pages 2753–2758)
Satria Zulkarnaen Bisri, Taishi Takenobu, Kosuke Sawabe, Satoshi Tsuda, Yohei Yomogida, Takeshi Yamao, Shu Hotta, Chihaya Adachi and Yoshihiro Iwasa
Version of Record online: 24 MAY 2011 | DOI: 10.1002/adma.201004572
A new method for investigating light-emitting property in organic devices is demonstrated. We apply the ambipolar light-emitting transistors (LETs) to directly observe the recombination zone, and find a strong link between the transistor performance and the zone size. This finding unambiguously indicates that the light emission comes from the electric-field-induced p-i-n homojunction in ambipolar LETs.