Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High-Performance Memristor (pages 5633–5640)
Feng Miao, John Paul Strachan, J. Joshua Yang, Min-Xian Zhang, Ilan Goldfarb, Antonio C. Torrezan, Peter Eschbach, Ronald D. Kelley, Gilberto Medeiros-Ribeiro and R. Stanley Williams
Article first published online: 8 NOV 2011 | DOI: 10.1002/adma.201103379
By employing a precise method for locating and directlyimaging the active switching region in a resistive random access memory (RRAM) device, a nanoscale conducting channel consisting of an amorphous Ta(O) solid solution surrounded by nearly stoichiometric Ta2O5 is observed. Structural and chemical analysis of the channel combined with temperature-dependent transport measurements indicate a unique resistance switching mechanism.