Strain-Mediated Phase Control and Electrolyte-Gating of Electron-Doped Manganites (pages 5822–5827)
Ping-Hua Xiang, Shutaro Asanuma, Hiroyuki Yamada, Isao H. Inoue, Hiroshi Sato, Hiroshi Akoh, Akihito Sawa, Kazunori Ueno, Hongtao Yuan, Hidekazu Shimotani, Masashi Kawasaki and Yoshihiro Iwasa
Article first published online: 22 NOV 2011 | DOI: 10.1002/adma.201102968
A prototype Mott transistor, the electric double layer transistor with a strained CaMnO3 thin film, is fabricated. As predicted by the strain phase diagram of electron-doped manganite films, the device with the compressively strained CaMnO3 exhibits an immense conductivity modulation upon applying a tiny gate voltage of 2 V.