High Mobility, Air Stable, Organic Single Crystal Transistors of an n-Type Diperylene Bisimide (pages 2626–2630)
Aifeng Lv, Sreenivasa R. Puniredd, Jiahui Zhang, Zhibo Li, Hongfei Zhu, Wei Jiang, Huanli Dong, Yudong He, Lang Jiang, Yan Li, Wojciech Pisula, Qing Meng, Wenping Hu and Zhaohui Wang
Article first published online: 13 APR 2012 | DOI: 10.1002/adma.201104987
A new n-type organic semiconductor, i.e., C12-4CldiPBI, is synthesized by a simple and facile route. Single crystal ribbons of C12-4CldiPBI are grown facilely by a solvent vapor diffusion strategy. Organic field-effect transistors based on individual ribbons are fabricated by a new technique named “Au stripe mask” method. All devices exhibit excellent n-type transistor behavior with negligible hysteresis, and all devices give an electron mobility over 1.0 cm2 V−1 s−1 with the highest mobility of 4.65 cm2 V−1 s−1. Moreover, the devices exhibit excellent air stability.