GaS and GaSe Ultrathin Layer Transistors (pages 3549–3554)
Dattatray J. Late, Bin Liu, Jiajun Luo, Aiming Yan, H. S. S. Ramakrishna Matte, Matthew Grayson, C. N. R. Rao and Vinayak P. Dravid
Article first published online: 8 JUN 2012 | DOI: 10.1002/adma.201201361
Room-temperature, bottom-gate, field-effect transistor characteristics of 2D ultrathin layer GaS and GaSe prepared from the bulk crystals using a micromechanical cleavage technique are reported. The transistors based on active GaS and GaSe ultrathin layers demonstrate typical n-and p-type conductance transistor operation along with a good ON/OFF ratio and electron differential mobility.