Dielectric-Constant-Enhanced Hall Mobility in Complex Oxides (pages 3965–3969)
Wolter Siemons, Michael A. McGuire, Valentino R. Cooper, Michael D. Biegalski, Ilia N. Ivanov, Gerald E. Jellison, Lynn A. Boatner, Brian C. Sales and Hans M. Christen
Version of Record online: 21 JUN 2012 | DOI: 10.1002/adma.201104665
The high dielectric constant of doped ferroelectric KTa1-xNbxO3 is shown to increase dielectric screening of electron scatterers, and thus to enhance the electronic mobility, overcoming one of the key limitations in the application of functional oxides. These observations are based on transport and optical measurements as well as band structure calculations.