Atomic Layer Engineering of Perovskite Oxides for Chemically Sharp Heterointerfaces (pages 6423–6428)
Woo Seok Choi, Christopher M. Rouleau, Sung Seok A. Seo, Zhenlin Luo, Hua Zhou, Timothy T. Fister, Jeffrey A. Eastman, Paul H. Fuoss, Dillon D. Fong, Jonathan Z. Tischler, Gyula Eres, Matthew F. Chisholm and Ho Nyung Lee
Version of Record online: 4 OCT 2012 | DOI: 10.1002/adma.201202691
Atomic layer engineering enables fabrication of a chemically sharp oxide heterointerface. The interface formation and strain evolution during the initial growth of LaAlO3/SrTiO3 heterostructures by pulsed laser deposition are investigated in search of a means for controlling the atomic-sharpness of the interface. This study shows that inserting a monolayer of LaAlO3 grown at high oxygen pressure dramatically enhances interface abruptness.