Enhanced Charge Carrier Mobility in Two-Dimensional High Dielectric Molybdenum Oxide (pages 109–114)
Sivacarendran Balendhran, Junkai Deng, Jian Zhen Ou, Sumeet Walia, James Scott, Jianshi Tang, Kang L. Wang, Matthew R. Field, Salvy Russo, Serge Zhuiykov, Michael S. Strano, Nikhil Medhekar, Sharath Sriram, Madhu Bhaskaran and Kourosh Kalantar-zadeh
Article first published online: 23 OCT 2012 | DOI: 10.1002/adma.201203346
We demonstrate that the energy bandgap of layered, high-dielectric α-MoO3 can be reduced to values viable for the fabrication of 2D electronic devices. This is achieved through embedding Coulomb charges within the high dielectric media, advantageously limiting charge scattering. As a result, devices with α-MoO3 of ∼11 nm thickness and carrier mobilities larger than 1100 cm2 V−1 s−1 are obtained.