Tunable Electroluminescence in Planar Graphene/SiO2 Memristors (pages 5593–5598)
Congli He, Jiafang Li, Xing Wu, Peng Chen, Jing Zhao, Kuibo Yin, Meng Cheng, Wei Yang, Guibai Xie, Duoming Wang, Donghua Liu, Rong Yang, Dongxia Shi, Zhiyuan Li, Litao Sun and Guangyu Zhang
Article first published online: 6 AUG 2013 | DOI: 10.1002/adma.201302447
Electroluminescence and resistive switching are first realized simultaneously in graphene/SiO2 memristor devices. The electroluminescence peaks can be tuned between 550 nm and 770 nm reliably via setting the device to different resistance states by applying different voltages. The combination of resistive switching and electroluminescence may bring new functionalities for these memristor devices which are fully compatible with silicon-based electronics.