A Single-Device Universal Logic Gate Based on a Magnetically Enhanced Memristor (pages 534–538)
Mirko Prezioso, Alberto Riminucci, Patrizio Graziosi, Ilaria Bergenti, Rajib Rakshit, Raimondo Cecchini, Anna Vianelli, Francesco Borgatti, Norman Haag, M. Willis, Alan J. Drew, William P. Gillin and Valentin A. Dediu
Article first published online: 23 OCT 2012 | DOI: 10.1002/adma.201202031
Memristors are one of the most promising candidates for future information and communications technology (ICT) architectures. Two experimental proofs of concept are presented based on the intermixing of spintronic and memristive effects into a single device, a magnetically enhanced memristor (MEM). By exploiting the interaction between the memristance and the giant magnetoresistance (GMR), a universal implication (IMP) logic gate based on a single MEM device is realized.