Nano-Newton Transverse Force Sensor Using a Vertical GaN Nanowire based on the Piezotronic Effect (pages 883–888)
Yu Sheng Zhou, Ronan Hinchet, Ya Yang, Gustavo Ardila, Rudeesun Songmuang, Fang Zhang, Yan Zhang, Weihua Han, Ken Pradel, Laurent Montès, Mireille Mouis and Zhong Lin Wang
Version of Record online: 19 NOV 2012 | DOI: 10.1002/adma.201203263
Enhanced transverse force sensitivity of vertically aligned GaN nanowires is demonstrated using the piezotronic effect. The transverse force sensitivity is calculated to be 1.24 ± 0.13 ln(A)/nN, with a resolution better than 16 nN and the response time less than 5 ms. The nano-Newton force resolution shows the potential for piezoelectric semiconductor materials to be used as the main building block for micro-/nanosensor arrays or artificial skin.