Split-Gate Organic Field-Effect Transistors for High-Speed Operation (pages 2983–2988)
T. Uemura, T. Matsumoto, K. Miyake, M. Uno, S. Ohnishi, T. Kato, M. Katayama, S. Shinamura, M. Hamada, M.-J. Kang, K. Takimiya, C. Mitsui, T. Okamoto and J. Takeya
Version of Record online: 25 JAN 2014 | DOI: 10.1002/adma.201304976
Split-gate organic field-effect transistors have been developed for high-speed operation. Owing to the combination of reduced contact resistance and minimized parasitic capacitance, the devices have fast switching characteristics. The cutoff frequencies for the vacuum-evaporated devices and the solution-processed devices are 20 and 10 MHz, respectively. A speed of 10 MHz is the fastest device reported so far among solution-processed organic transistors.