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Keywords:

  • silicon nanocrystals;
  • strain engineering;
  • photoluminescence;
  • direct bandgap;
  • surface termination
Thumbnail image of graphical abstract

Methyl-passivated silicon nanocrystals, such as the one in the foreground of the cover image, are capable of fast and efficient luminescence although their bulk counterpart is an indirect semiconductor. K. Kû sová and co-workers show in article 1300042 that appropriately chosen surface capping tensilestrains the crystalline core and thus transforms this form of silicon into a material with a fundamental direct bandgap.