+ These authors contributed equally to this work.
ZnO p–n Homojunction Random Laser Diode Based on Nitrogen-Doped p-type Nanowires
Article first published online: 22 FEB 2013
© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Advanced Optical Materials
Volume 1, Issue 2, pages 179–185, February 2013
How to Cite
Huang, J., Chu, S., Kong, J., Zhang, L., Schwarz, C. M., Wang, G., Chernyak, L., Chen, Z. and Liu, J. (2013), ZnO p–n Homojunction Random Laser Diode Based on Nitrogen-Doped p-type Nanowires. Advanced Optical Materials, 1: 179–185. doi: 10.1002/adom.201200062
- Issue published online: 22 FEB 2013
- Article first published online: 22 FEB 2013
- Manuscript Revised: 8 JAN 2013
- Manuscript Received: 16 DEC 2012
- National Science Foundation. Grant Number: ECCS 0900978
- Department of Energy. Grant Number: DE-FG02-08ER46520
- random lasers;
An electrically pumped ZnO homojunction random laser diode based on nitrogen-doped p-type ZnO nanowires is reported. Nitrogen-doped ZnO nanowires are grown on a ZnO thin film on a silicon substrate by chemical vapor deposition without using any metal catalyst. The p-type behavior is studied by output characteristics and transfer characteristic of the nanowire back-gated field-effect transistor, as well as low-temperature photoluminescence. The formation of the p–n junction is confirmed by the current–voltage characteristic and electron beam-induced current. The nanowire/thin-film p–n junction acts as random laser diode. The random lasing behavior is demonstrated by using both optical pumping and electrical pumping, with thresholds of 300 kW/cm2 and 40 mA, respectively. The angle-dependant electroluminescence of the device further proves the random lasing mechanism. An output power of 70 nW is measured at a drive current of 70 mA.