Laser-Mediated Programmable N Doping and Simultaneous Reduction of Graphene Oxides

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Abstract

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Programmable N-doping and simultaneous reduction of graphine oxide (GO) by femtosecond laser direct writing in NH3 atmosphere is presented. The unique laser-mediated programmable doping permits complex micropatterns of N-doped graphene, and thus holds great promise for the fabrication and integration of graphene-based devices. N-type transistor behavior is observed in the post-fabricated field-effect transistors.

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