Photonic Materials: Silicon Hyperuniform Disordered Photonic Materials with a Pronounced Gap in the Shortwave Infrared (Advanced Optical Materials 2/2014)

Authors

  • Nicolas Muller,

    1. Department of Physics and Fribourg, Center for Nanomaterials, University of Fribourg, Fribourg, Switzerland
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  • Jakub Haberko,

    1. Department of Physics and Fribourg, Center for Nanomaterials, University of Fribourg, Fribourg, Switzerland
    2. Faculty of Physics and Applied Computer Science, AGH University of Science and Technology, Krakow, Poland
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  • Catherine Marichy,

    1. Department of Physics and Fribourg, Center for Nanomaterials, University of Fribourg, Fribourg, Switzerland
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  • Frank Scheffold

    Corresponding author
    1. Department of Physics and Fribourg, Center for Nanomaterials, University of Fribourg, Fribourg, Switzerland
    • Department of Physics and Fribourg, Center for Nanomaterials, University of Fribourg, Chémin du Musée 3, 1700 Fribourg Switzerland

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Abstract

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Unusual network structures are used by F. Scheffold and co-workers as templates for a new type of disordered photonic material. The networks are constructed by 3D tessellation based on numerically generated point patterns with long-range hyperuniform correlations. On page 115, using a combination of direct laser writing lithography and chemical vapor deposition, mesoscale silicon replicas of the disordered networks are created. Optical transmittance measurements show a pronounced gap in the shortwave infrared at λG ≈ 2.6 μm.

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