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Keywords:

  • photonic bandgap materials;
  • direct laser writing;
  • atomic layer deposition;
  • silicon infiltration
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Unusual network structures are used by F. Scheffold and co-workers as templates for a new type of disordered photonic material. The networks are constructed by 3D tessellation based on numerically generated point patterns with long-range hyperuniform correlations. On page 115, using a combination of direct laser writing lithography and chemical vapor deposition, mesoscale silicon replicas of the disordered networks are created. Optical transmittance measurements show a pronounced gap in the shortwave infrared at λG ≈ 2.6 μm.