Ultrahigh Photoresponse of Few-Layer TiS3 Nanoribbon Transistors (pages 641–645)
Joshua O. Island, Michele Buscema, Mariam Barawi, José M. Clamagirand, José R. Ares, Carlos Sánchez, Isabel J. Ferrer, Gary A. Steele, Herre S. J. van der Zant and Andres Castellanos-Gomez
Article first published online: 8 APR 2014 | DOI: 10.1002/adom.201400043
TiS3 nanoribbons with thickness down to 15 nm are isolated by viscoelastic mechanical exfoliation. Field-effect transistors are fabricated and their electrical characteristics are studied in the dark state and upon illumination. An ultrahigh photoresponse up to 3000 A/W, a bandgap of 1 eV, and response times of about 4 ms are found making TiS3 a state-of-the-art material in photodetection.