Chalcopyrite Semiconductors for Quantum Well Solar Cells

Authors

  • Maziar Afshar,

    1. Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1, 14109 Berlin, Germany
    Current affiliation:
    1. Universität des Saarlandes, Uni Campus, Gebäude A5.1, 66123 Saarbrücken, Germany
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  • Sascha Sadewasser,

    Corresponding author
    1. Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1, 14109 Berlin, Germany
    Current affiliation:
    1. International Iberian Nanotechnology Laboratory, Avda. Mestre José Veiga s/n, 4715-310 Braga, Portugal
    • Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1, 14109 Berlin, Germany.
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  • Jürgen Albert,

    1. Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1, 14109 Berlin, Germany
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  • Sebastian Lehmann,

    1. Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1, 14109 Berlin, Germany
    Current affiliation:
    1. Solid State Physics, Lund University, Box 118, 22100-Lund, Sweden
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  • Daniel Abou-Ras,

    1. Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1, 14109 Berlin, Germany
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  • David Fuertes Marrón,

    1. Instituto de Energía Solar - ETSIT, Universidad Politécnica de Madrid, Ciudad Universitaria s.n., 28040 Madrid, Spain
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  • Angus A. Rockett,

    1. Department of Materials Science and Engineering, University of Illinois, 1304 W. Green Street, Urbana, IL 61801, USA
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  • Esa Räsänen,

    1. Nanoscience Center, Department of Physics University of Jyväskylä, FI-40014 Jyväskylä, Finland
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  • Martha Ch. Lux-Steiner

    1. Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1, 14109 Berlin, Germany
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Abstract

The possibilities of using highly absorbing chalcopyrite semiconductors of the type Cu(In,Ga)Se2 in a quantum well solar cell structure are explored. Thin alternating layers of 50 nm CuInSe2 and CuGaSe2 were grown epitaxially on a GaAs(100) substrate. The optical properties of a resulting structure of three layers indicate charge carrier confinement in the low band gap CuInSe2 layer. By compositional analysis interdiffusion of In and Ga at the interfaces was found. The compositional profile was converted into a conduction-band diagram, for which the quantization of energy levels was numerically confirmed using the effective-mass approximation. The results provide a promising basis for the future development of chalcopyrite-type quantum well structures and their application, i.e. in quantum well solar cells.

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