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Keywords:

  • CdS;
  • nanowire;
  • surface charge transfer;
  • MoO3;
  • p-n junction;
  • photovoltaic
Thumbnail image of graphical abstract

Unique p-type CdS nanowires with ultrahigh mobility for photovoltaic devices: p-type CdS nanowires can be prepared by surface charge transfer doping with a thin MoO3 layer, which shows excellent rectifying characteristics with a high on/off current ratio of ∼1.6 × 102 and a low forward turn-on voltage of about 1.0 V at room temperature, and obvious photovoltaic behavior with a power conversion efficiency (η) up to 1.65%.