Ultrahigh Mobility of p-Type CdS Nanowires: Surface Charge Transfer Doping and Photovoltaic Devices

Authors

  • Fang-Ze Li,

    1. School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, Anhui 230009, P. R. China
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  • Lin-Bao Luo,

    Corresponding author
    1. School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, Anhui 230009, P. R. China
    • School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, Anhui 230009, P. R. China
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  • Qing-Dan Yang,

    1. Center of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR, P. R. China
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  • Di Wu,

    1. School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, Anhui 230009, P. R. China
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  • Chao Xie,

    1. School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, Anhui 230009, P. R. China
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  • Biao Nie,

    1. School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, Anhui 230009, P. R. China
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  • Jian-Sheng Jie,

    Corresponding author
    1. Institute of Functional Nano & Soft Materials (FUNSOM) and Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu 215123, P. R. China
    • Institute of Functional Nano & Soft Materials (FUNSOM) and Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu 215123, P. R. China
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  • Chun-Yan Wu,

    1. School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, Anhui 230009, P. R. China
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  • Li Wang,

    1. School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, Anhui 230009, P. R. China
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  • Shu-Hong Yu

    Corresponding author
    1. Division of Nanomaterials and Chemistry, Hefei National Laboratory for Physical Sciences at Microscale, Department of Chemistry, University of Science and Technology of China, Hefei, Anhui 230026, P. R. China, Fax: +86 551 3603040
    • Division of Nanomaterials and Chemistry, Hefei National Laboratory for Physical Sciences at Microscale, Department of Chemistry, University of Science and Technology of China, Hefei, Anhui 230026, P. R. China, Fax: +86 551 3603040.
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Abstract

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Unique p-type CdS nanowires with ultrahigh mobility for photovoltaic devices: p-type CdS nanowires can be prepared by surface charge transfer doping with a thin MoO3 layer, which shows excellent rectifying characteristics with a high on/off current ratio of ∼1.6 × 102 and a low forward turn-on voltage of about 1.0 V at room temperature, and obvious photovoltaic behavior with a power conversion efficiency (η) up to 1.65%.

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