Low-Temperature Combustion-Synthesized Nickel Oxide Thin Films as Hole-Transport Interlayers for Solution-Processed Optoelectronic Devices

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Abstract

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A method to deposit NiOx thin films by employing combustion reactions is reported and a low processing temperature of 175 °C is demonstrated. The resulting NiOx films exhibit high work functions, excellent optical transparency, and flat surface features. The NiOx thin films are employed as hole-transport interlayers in organic solar cells and polymer light-emitting diodes, exhibiting superior electrical properties.

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