Improved Cu2O-Based Solar Cells Using Atomic Layer Deposition to Control the Cu Oxidation State at the p-n Junction

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Abstract

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Solar cells are produced by atomic layer deposition (ALD) of n-type amorphous zinc-tin-oxide buffer layers on electrochemically deposited p-type cuprous oxide, Cu2O, absorber layers. The diethylzinc precursor in the ALD process reduces Cu2+-related defects at the heterojunction interface, improving the solar-cell open-circuit voltage. An NREL-certified power conversion efficiency of 2.85% is reported.

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