Get access

Thin HfxZr1-xO2 Films: A New Lead-Free System for Electrostatic Supercapacitors with Large Energy Storage Density and Robust Thermal Stability

Authors

  • Min Hyuk Park,

    1. Department of Materials Science & Engineering and Inter-university Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, Republic of Korea
    Search for more papers by this author
  • Han Joon Kim,

    1. Department of Materials Science & Engineering and Inter-university Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, Republic of Korea
    Search for more papers by this author
  • Yu Jin Kim,

    1. Department of Materials Science & Engineering and Inter-university Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, Republic of Korea
    Search for more papers by this author
  • Taehwan Moon,

    1. Department of Materials Science & Engineering and Inter-university Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, Republic of Korea
    Search for more papers by this author
  • Keum Do Kim,

    1. Department of Materials Science & Engineering and Inter-university Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, Republic of Korea
    Search for more papers by this author
  • Cheol Seong Hwang

    Corresponding author
    1. Department of Materials Science & Engineering and Inter-university Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, Republic of Korea
    Search for more papers by this author

Abstract

image

The promising energy storage properties of new lead-free antiferroelectric HfxZr1-xO2 (x = 0.1–0.4) films with high energy storage density are reported. The energy storage density of the Hf0.3Zr0.7O2 capacitor does not decrease with the increase in temperature up to 175 °C, and it decreases by only ≈4.5% after field cycling 109 times.

Ancillary