Optoelectronic Devices: Low-Temperature Combustion-Synthesized Nickel Oxide Thin Films as Hole-Transport Interlayers for Solution-Processed Optoelectronic Devices (Adv. Energy Mater. 6/2014)

Authors

  • Sai Bai,

    1. State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou, P. R. China
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  • Motao Cao,

    1. State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou, P. R. China
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  • Yizheng Jin,

    Corresponding author
    1. State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou, P. R. China
    2. Cyrus Tang Center for Sensor Materials and Applications, Zhejiang University, Hangzhou, P. R. China
    3. Center for Chemistry of High-Performance and Novel Materials, Zhejiang University, Hangzhou, P. R. China
    • Yizheng Jin, State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 P. R. China

      Baoquan Sun, Cyrus Tang Center for Sensor Materials and Applications, Zhejiang University, Hangzhou 310027 P. R. China

      Feng Gao, Center for Chemistry of High-Performance and Novel Materials, Zhejiang University, Hangzhou 310027 P. R. China

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  • Xinliang Dai,

    1. State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou, P. R. China
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  • Xiaoyong Liang,

    1. State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou, P. R. China
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  • Zhizhen Ye,

    1. State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou, P. R. China
    2. Cyrus Tang Center for Sensor Materials and Applications, Zhejiang University, Hangzhou, P. R. China
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  • Min Li,

    1. State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou, P. R. China
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  • Jipeng Cheng,

    1. State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou, P. R. China
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  • Xuezhang Xiao,

    1. State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou, P. R. China
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  • Zhongwei Wu,

    1. Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, P. R. China
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  • Zhouhui Xia,

    1. Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, P. R. China
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  • Baoquan Sun,

    Corresponding author
    1. Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, P. R. China
    • Yizheng Jin, State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 P. R. China

      Baoquan Sun, Cyrus Tang Center for Sensor Materials and Applications, Zhejiang University, Hangzhou 310027 P. R. China

      Feng Gao, Center for Chemistry of High-Performance and Novel Materials, Zhejiang University, Hangzhou 310027 P. R. China

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  • Ergang Wang,

    1. Department of Chemical and Biological, Engineering/Polymer Technology, Chalmers University of Technology, Göteborg, Sweden
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  • Yueqi Mo,

    1. Key Laboratory of Special Functional Materials, South China University of Technology, Guangzhou, China
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  • Feng Gao,

    Corresponding author
    1. Biomolecular and Organic Electronics, IFM and Center of Organic Electronics, Linköping University, Linköping, Sweden
    • Yizheng Jin, State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 P. R. China

      Baoquan Sun, Cyrus Tang Center for Sensor Materials and Applications, Zhejiang University, Hangzhou 310027 P. R. China

      Feng Gao, Center for Chemistry of High-Performance and Novel Materials, Zhejiang University, Hangzhou 310027 P. R. China

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  • Fengling Zhang

    1. Biomolecular and Organic Electronics, IFM and Center of Organic Electronics, Linköping University, Linköping, Sweden
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Abstract

image

A solution-combustion strategy based on aqueous precursors is developed to fabricate nickel oxide (NiOx) thin films with excellent optical transparency, flat surface features, and a high work function. As reported by Yizheng Jin, Baoquan Sun, Feng Gao, and co-workers in article number 1301460, these are promising candidates for hole-transporting and electron-blocking interlayers in solution-processed optoelectronic devices.

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