1547-5905/asset/AIC_left.gif?v=1&s=43a3d567c64d3d5d712c0af6c2cacb1e1bcc1a2b)
1547-5905/asset/AIC_right.gif?v=1&s=518efadeedca9ceeef271499f690fdebd2ed9164)
Fluid Mechanics and Transport Phenomena
Undulating topography of HfO2 thin films deposited in a mesoscale reactor using hafnium (IV) tert butoxide
Article first published online: 16 FEB 2011
DOI: 10.1002/aic.12504
Copyright © 2011 American Institute of Chemical Engineers (AIChE)
Additional Information
How to Cite
Li, K., Zhang, L., Dixon, D. A. and Klein, T. M. (2011), Undulating topography of HfO2 thin films deposited in a mesoscale reactor using hafnium (IV) tert butoxide. AIChE J., 57: 2989–2996. doi: 10.1002/aic.12504
Publication History
- Issue published online: 10 OCT 2011
- Article first published online: 16 FEB 2011
- Accepted manuscript online: 10 DEC 2010 11:41AM EST
- Manuscript Revised: 18 NOV 2010
- Manuscript Received: 25 SEP 2010
Funded by
- NSF CAREER award. Grant Number: 0239213
- Chemical Sciences, Geosciences and Biosciences Division, Office of Basic Energy Sciences, U.S. Department of Energy (DOE). Grant Number: DE-FG02-03ER15481
- National Science Foundation. Grant Number: CTS-0608896
- University of Alabama
Keywords:
- adsorption/gas;
- computational fluid dynamics;
- chemical vapor deposition;
- thin film;
- heat transfer
Abstract
HfO2 was deposited by chemical vapor deposition on Si, native SiO2, and borosilicate glass surfaces using hafnium (IV) tert butoxide in a mesoscale flow reactor. Undulating thin film topographies were observed by atomic force microscopy on all substrates with peak-to-peak periods between 10 and 25 nm in the presence of a temperature gradient perpendicular to flow of 25°C/mm. A computational fluid dynamic model suggests the phenomenon originates from buoyancy driven roll type flow. The thickness uniformity and roughness of the films depended on the flow rate, reactor temperature, and the substrate type. © 2011 American Institute of Chemical Engineers AIChE J, 2011