Fluid Mechanics and Transport Phenomena
Undulating topography of HfO2 thin films deposited in a mesoscale reactor using hafnium (IV) tert butoxide
Article first published online: 16 FEB 2011
Copyright © 2011 American Institute of Chemical Engineers (AIChE)
Volume 57, Issue 11, pages 2989–2996, November 2011
How to Cite
Li, K., Zhang, L., Dixon, D. A. and Klein, T. M. (2011), Undulating topography of HfO2 thin films deposited in a mesoscale reactor using hafnium (IV) tert butoxide. AIChE J., 57: 2989–2996. doi: 10.1002/aic.12504
- Issue published online: 10 OCT 2011
- Article first published online: 16 FEB 2011
- Accepted manuscript online: 10 DEC 2010 11:41AM EST
- Manuscript Revised: 18 NOV 2010
- Manuscript Received: 25 SEP 2010
- NSF CAREER award. Grant Number: 0239213
- Chemical Sciences, Geosciences and Biosciences Division, Office of Basic Energy Sciences, U.S. Department of Energy (DOE). Grant Number: DE-FG02-03ER15481
- National Science Foundation. Grant Number: CTS-0608896
- University of Alabama
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