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Materials, Interfaces, and Electrochemical Phenomena
Investigation of chitosan gelation mechanisms by a modeling approach coupled to local experimental measurement
Article first published online: 8 AUG 2011
DOI: 10.1002/aic.12737
Copyright © 2011 American Institute of Chemical Engineers (AIChE)
Additional Information
How to Cite
Venault, A., Bouyer, D., Pochat-Bohatier, C., Vachoud, L. and Faur, C. (2012), Investigation of chitosan gelation mechanisms by a modeling approach coupled to local experimental measurement. AIChE J., 58: 2226–2240. doi: 10.1002/aic.12737
Publication History
- Issue published online: 7 JUN 2012
- Article first published online: 8 AUG 2011
- Accepted manuscript online: 15 JUL 2011 07:59AM EST
- Manuscript Revised: 22 JUN 2011
- Manuscript Received: 11 FEB 2011
Funded by
- French National Agency of Research (ANR). Grant Number: PANSKIT (ANR-08-MAPR-0021-01)
- Abstract
- Article
- References
- Cited By
Keywords:
- chitosan hydrogels;
- wet process;
- vapor process;
- mass transfers;
- modeling
Abstract
The formation of chitosan hydrogels using experimental and modeling approaches are described. Chitosan gelation was induced by an ammonia intake from a liquid phase (wet process) or a gaseous phase (vapor process), involving three steps: (i) external mass transfer at the interface, (ii) internal transport within the polymer solution, and (iii) chemical reactions inducing gelation. The experimental study allowed quantifying gelation fronts speeds from local measurement. The main resistance to gelation was investigated for both gelation processes. Experimental results exhibited that internal diffusion through the chitosan matrix was the main resistance in the whole gelation mechanism. The numerical model involved a coupling between mass and heat transfer phenomena and chemical reactions, in transient conditions. Numerical results were first validated and then used as a predictive tool to investigate (i) coupled mechanisms localized in the chitosan matrix and (ii) the influence of operating conditions on gelation rates. © 2011 American Institute of Chemical Engineers AIChE J, 2012