Reaction Engineering, Kinetics and Catalysis
Obtaining model-independent growth rates from experimental data of dry thermal oxidation of silicon
Article first published online: 29 JAN 2014
© 2014 American Institute of Chemical Engineers
Volume 60, Issue 5, pages 1810–1820, May 2014
How to Cite
Yeow, Y. L., Liow, J.-L. and Leong, Y.-K. (2014), Obtaining model-independent growth rates from experimental data of dry thermal oxidation of silicon. AIChE J., 60: 1810–1820. doi: 10.1002/aic.14375
- Issue published online: 8 APR 2014
- Article first published online: 29 JAN 2014
- Accepted manuscript online: 17 JAN 2014 02:01AM EST
- Manuscript Revised: 24 DEC 2013
- Manuscript Received: 8 MAY 2013
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