Get access

Electron and hole transport in degenerate semiconductors



Concentration-dependent activity coefficients were used in conjunction with dilute-solution transport equations to show the effect of degeneracy on the apparent physical properties of semiconductors and on the performance of photovoltaic cells. The approach presented here allows convenient treatment of degenerate semiconductors in a manner that is both thermodynamically consistent and consistent with the Fermi-Dirac distribution for electrons. These calculations show that neglect of the concentration dependency of the activity coefficients has a large effect on the calculated values for local concentrations in a photovoltaic device, but affects the calculated values of power density and cell potential only slightly. Neglect of the concentration dependency of the activity coefficients does have a significant effect on the calculation of the resistivity of the semiconductor.

Get access to the full text of this article