Get access
Advertisement

Mercury-sensitized photochemical vapor deposition of amorphous silicon

Authors

  • D. E. Albright,

    1. Department of Chemical Engineering and Institute of Energy Conversion, University of Delaware Newark, DE 19716
    Search for more papers by this author
  • N. Saxena,

    1. Department of Chemical Engineering and Institute of Energy Conversion, University of Delaware Newark, DE 19716
    Search for more papers by this author
  • C. M. Fortmann,

    1. Department of Chemical Engineering and Institute of Energy Conversion, University of Delaware Newark, DE 19716
    Search for more papers by this author
  • R. E. Rocheleau,

    1. Department of Chemical Engineering and Institute of Energy Conversion, University of Delaware Newark, DE 19716
    Current affiliation:
    1. Hawaii Natural Energy Institute, University of Hawaii, Honolulu, HI 96822
    Search for more papers by this author
  • T. W. F. Russell

    Corresponding author
    1. Department of Chemical Engineering and Institute of Energy Conversion, University of Delaware Newark, DE 19716
    • Department of Chemical Engineering and Institute of Energy Conversion, University of Delaware Newark, DE 19716
    Search for more papers by this author

Abstract

A reaction engineering model has been developed to describe the mercury-sensitized photochemical vapor deposition of hydrogenated amorphous silicon (a-Si:H) semiconductor thin films. Model equations governing the gas-phase generation, transport, and surface reactions of SiH3 and H film precursor radicals are solved to predict film growth rate and bonded hydrogen content. Behavior of the model has been studied as a function of deposition conditions (pressure, temperature, feed composition, and flow rates) and has been verified by comparison with experimental results.

Get access to the full text of this article

Ancillary