L. Catoirc is on leave from LCSR, CNRS, Orleans, France.
High-temperature kinetics of Si-containing precursors for ceramic processing
Article first published online: 17 JUN 2004
Copyright © 1997 American Institute of Chemical Engineers
Supplement: Special Ceramics Processing Issue
Volume 43, Issue Supplement 11A, pages 2670–2678, 1997
How to Cite
Woiki, D., Catoire, L. and Roth, P. (1997), High-temperature kinetics of Si-containing precursors for ceramic processing. AIChE J., 43: 2670–2678. doi: 10.1002/aic.690431311
- Issue published online: 17 JUN 2004
- Article first published online: 17 JUN 2004
- Manuscript Revised: 2 APR 1997
- Manuscript Received: 28 OCT 1996
Experimental investigations of high-temperature kinetics of Si-precursor molecules relevant to CVD and ceramic processing are described. Reaction systems using SiH4, Si2H6, and SiCl4 highly diluted in argon were studied in a shock tube, a high-temperature wave reactor, by monitoring in situ the concentrations of atomic or radical reactants Si, H, Cl, SiH, and SiH2. Because of the very high dilution, the measured properties are sensitive to a limited number of elementary reactions, allowing a relatively direct determination of the respective rate coefficients. Both thermal pyrolysis and laser flash photolysis methods were used to expand the investigated temperature range. An overview of the bimolecular Si-atom reactions is given.