A new selected-area chemical-vapor deposition (CVD) process to fabricate thin sensing films on a micromachined silicon-based, conductometric gas-sensor structure is reported. The CVD method is self-lithographic and does not require the use of masks to define the thin-film region. Since the films are deposited after silicon processing, the selection of film materials is not constrained by their compatibility with the etchants used in silicon micromachining. The presence of conductance electrodes underneath the growing film permits in-situ monitoring of film resistance. The rapid thermal response of the device allows precise termination of film growth once the film resistance has reached a value suitable for gas sensing. The application of this new CVD method is demonstrated for growth of thin platinum films, which are used for sensing of O2 and H2 gases.