Transient enhanced diffusion (TED) of boron limits the formation of ultrashallow junctions needed in next-generation microelectronic devices. A comprehensive TED model needs many parameters governing the physical and chemical processes. Prior estimates of the most likely values for the parameters as well as their accuracies are determined from maximum likelihood estimation applied to estimates from focused individual experiments and density functional theory calculations. Here a systematic approach to model-parameter identification using maximum a posteriori estimation is employed combining the maximum likelihood parameter estimates and their uncertainties in conjunction with after-anneal boron SIMS profiles to obtain accurate TED energetics. Guidance on future experimental and ab initio efforts are given based on the agreement (and disagreement) between the prior and posterior distributions.